850nm High Power IR Transmitter LED Diode

850nm High Power IR Transmitter LED Diode

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Min. Order:: 100 Piece/Pieces

Min. Order:: 100 Piece/Pieces

Transportation:: Ocean, Land, Air

Port:: SHENZHEN

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Basic Info

Place of Origin:	China
Productivity:	1000000000 pcs/week
Supply Ability:	7000000000 pcs/week
Payment Type:	T/T,Paypal,Western Union
Incoterm:	FOB,EXW,FCA
Certificate:	GB/T19001-2008/ISO9001:2008
HS Code:	8541401000
Transportation:	Ocean,Land,Air
Port:	SHENZHEN

Product Description

3838IRC-85L/42I350-90A

These 3838IRC-85L/42I350-90A is a high power infrared mini LED. It have a small size and strongest radiation. In addition, 3838IRC-85L/42I350-90A also is a IR Domed LEDS, short switching times,Typical wavelength 850nm and size is 3.8mm...All of this advantage make this high power 850nm IR LED getting popular in IR LED project. With this extra 90 degree lens and high output, this IR LED can emits 420mW/sr radiation at 1000mA current. These small size are perfect for some LED project or some IR control system that didn't have that much space. Shenzhen Best LED Opto-electronic Co.,Ltd supply high power 3838 SMD LED, 3535 SMD LED, 2835 SMD LED, 3528SMD LED with extra lens or diffused lens LED. All the product can meet CE, EN62471 and RoHs certification. Do you need some high quality and high power IR LED? Contact us for more detail~

- Size: 3.85*3.85*H2.33mm

- Chip Number:1 chips

- Color: 850nm

- Type: water clear

- Chip brand: tyntek

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

- Size of High Power IR LED -

850nm High Power IR LED Size

. All dimensions are in millimeters ; 2. Tolerance is ± 0.10 mm unless otherwise noted.

- Working Through-hole IR LED -

850nm IR led

*Colors in the photo was took by camera, please take actual emitting color as standard.

- Electrical Parameters -

Absolute Maximum Ratings At Ta=25℃

Parameter	Symbol	Rating
Power Dissipation	Pd	3200mw
Pulse Forward Current	IFP	2000mw
Forward Current	IF	1000mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	3000v
Warranty	Time	5 Years
Antistatic bag	Piece	2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Optical and Electrical Characteristics( Tc=25℃)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage

VF

1.6

2.2

V

IF=350mA

2.8 3.5 V IF=1000mA

Luminous Flux

Φ

360

480
mw/sr

IF=350mA

420
mw/sr IF=1000mA

Peak Wavelength

λP

850

nm

IF=20mA

Half Width

Dl

40

nm

IF=20mA

Viewing Half Angle

2q1/2

±45

deg

IF=20mA

Reverse Current

IR

10

uA

VR=5V

Rise Time

Tr

15

ns

IF=20mA

Fall Time

Tf

13

ns

IF=20mA

*Luminous Intensity is measured by ZWL600.

*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- Golden Wire Connection -

* In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection

- IR LED Packing -

led SMD LED

*We can pack this LED with any number of packages and taped or bend the LED pins as your requirement.

- Application -

- Related SMD IR LED -

- Production Process -

LED LAMP

- SMD IR LED -

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Related Keywords

850nm LED Transmitter , 850nm Opto Semiconductors Infrared Emitters , 850 Nm Infrared Emitters

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.6		2.2	V	IF=350mA
Forward Voltage	VF		2.8	3.5	V	IF=1000mA
Luminous Flux	Φ	360		480	mw/sr	IF=350mA
Luminous Flux	Φ		420		mw/sr	IF=1000mA
Peak Wavelength	λP		850		nm	IF=20mA
Half Width	Dl		40		nm	IF=20mA
Viewing Half Angle	2q1/2		±45		deg	IF=20mA
Reverse Current	IR			10	uA	VR=5V
Rise Time	Tr		15		ns	IF=20mA
Fall Time	Tf		13		ns	IF=20mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.