
UV-A only detection use SiC Based UV Photodiode SG01L-A5 UV sensor
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Place of Origin: | Germany |
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Product Description
Product Description
UVA-only SiC Based UV Photodiode - SG01L–A5
Properties of the SG01L–A5 UV photodiode
• UVA-only sensitivity, PTB reported high chip stability
• Active Area A = 1,0 mm2
• TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 3,7 nA About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

• UVA-only sensitivity, PTB reported high chip stability
• Active Area A = 1,0 mm2
• TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 3,7 nA About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

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