Customization ICut Package 1064nm 200MW Laser Diode

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Basic Info

Payment Type:	Western Union,T/T

Product Description

ICut Package TO5 1064nm 200MW Laser Diode

Ø Type emission wavelength1064nm

Ø Efficient radiation source for cw and pulsed

Ø Operation

Ø Single transverse mode semiconductor laser

Ø High modulation bandwidth

Ø Miniaturized TO5 ICut package

Ø Laser diode isolated against package

Application

Ø Laser projection

Ø Instrumentation

Ø Biomedical Applications

Ø Holography

Ø Metro logy

Data:

Absolute Maximum Ratings at TA = 25℃

Parameter	Symbol	Rating	Unit	Notice
Total Power dissipation	P_tot	1.5	mW
Power Dissipation	P_d	20	mW
Average Forward Current	I_F	10	mA	max
Forward Current	F_c	10	mA	max
Lead Soldering Temperature	T_sol	260	℃	4mm from mold body less than 5 seconds
Operating Temperature	T_opr	-25 ~+85	℃
Storage Temperature	T_stg	-40 ~ +85	℃

Electronic Optical Characteristics : (Ta=25℃) Electronic Optical Characteristics : (Ta=25℃)

Parameter Rang of Spectral	Symbol	Min.	Typ.	Max.	Unit	Condition
Bandwidth	λ0.5	----	850	----	nm	V R =0 V
Wavelength of Peak Sensitivity	λp	----	1300	----	V R =0 V	V R =0 V
Sensitivity range at 20%	λ_min λ_max	800		1700	nm	V R =0 V
Total Capacitance	Ct	----	1100	1250	pF	F=1MHz VR=0V
	450	550	pF	F=1MHz VR=-5V
Rise/Fall Time	tr/tf	---	17	----	nS	RL=100 VR=1.5V
Breakdown voltage	V_R		50		V	I r =10 µA
Dark current	Id		10	20	nA	V_R=-5 V@25 ℃
Shunt resistance	R_SH		5	20	M	V R =-10 mV
Noise equivalent power	N_EP		4.5x10^-12		w/√Hz	λ = 1300 nm V=0V f=1MHz
Responsivity	R_PT		0.8	0.95	^A/W	λ = 1300 nm V=0V
	0.95	1.05	^A/W	λ = 1550 nm V=0V
dB Bandwidth*	_BW		4.5	6	MHz	VR=-0.5V, 50Q
Saturation Power	_SP		1.5	3.0	mW	λ = 1300 nm V=0V,-0.2dB