RF Power Transistors MRF21125S - Motorola, Inc - RF POWER F

Quick Detail:

MRF21125S - Motorola, Inc - RF POWER FIELD EFFECT TRANSISTORS

Description:

Designed for W–CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN–PCS/cellular radio and WLL

applications.

Applications:

• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600

mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,

adjacent channels at

± 5 MHz , ACPR and IM3 measured in 3.84 MHz

bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.

Output Power — 20 Watts

Efficiency — 18%

Gain — 13 dB

IM3 — –43 dBc

ACPR — –45 dBc

• 100% Tested under 2–carrier W–CDMA

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Specifications:

Competitive Advantage:

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

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Tag:

MRF21125,MRF21125S,MRF21125SR3