RF Power Transistors MRF20030 - Motorola, Inc - RF POWER TR

Quick Detail:

MRF20030 - Motorola, Inc - RF POWER TRANSISTOR

Description:

Designed for broadband commercial and industrial applications at frequen-

cies from 1800 to 2000 MHz. The high gain and broadband performance of this

device makes it ideal for large–signal, common–emitter class A and class AB

amplifier applications. Suitable for frequency modulated, amplitude modulated

and multi–carrier base station RF power amplifiers.

Applications:

• Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

Output Power — 30 Watts (PEP)

Power Gain — 9.8 dB

Efficiency — 34%

Intermodulation Distortion — –28 dBc

• Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics

Output Power — 30 Watts

Power Gain — 10.5 dB

Efficiency — 40%

• Excellent Thermal Stability

• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)

Output Power

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Designed for FM, TDMA, CDMA, and Multi–Carrier Applications

Specifications:

Competitive Advantage:

Warranty :180days for all goods

Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

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Tag:

MRF21010