Global Hightech Technology Ltd
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Global Hightech Technology Ltd
Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing
  • Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing
  • Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing
Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing
Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing

Factory produced DDR2, 2GB 533/667/800MHz, with retail or bulk packing

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Basic Info
Basic Info
Payment Type: Telegraphic Transfer in Advance (Advance TT, T/T)
Product Description
Product Description
  • Description:
    • DDRII 533/667/800MHz
    • 168/184/240-pin socket type dual in line memory module (DIMM)
    • 1.8V power supply
    • Data rate: 533/667/800Mbps (maximum)
    • 2.5V (SSTL-2 compatible) I/O for DDRI products, 1.8V power supply for DDRII products
    • Double data-rate architecture, two data transfers per clock cycle
    • Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
    • Data input and output are synchronized with DQS
    • DQS is edge aligned with data for read, center aligned with data for write
    • Differential clock input (CK and CK)
    • DLL aligns DQ and DQS transitions with CK transitions
    • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
    • Four internal banks for concurrent operating (component)
    • Data mask (DM) for write data
  • Features:
    • Capacity: 2GB DDR2 RAM
    • DDR memory type: DDR2
    • Number of pins: 184
    • Module type: long DIMM
    • Function: non-ECC memory
  • Hot selling points:
    • Original chips eg Hynix, Micron, Infineon, Samsung, Elp, Nanya ex
    • Working with all motherboard eg: Intel
  • DDRII 533/667/800MHz
  • 168/184/240-pin socket type dual in line memory module (DIMM)
  • 1.8V power supply
  • Data rate: 533/667/800Mbps (maximum)
  • 2.5V (SSTL-2 compatible) I/O for DDRI products, 1.8V power supply for DDRII products
  • Double data-rate architecture, two data transfers per clock cycle
  • Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
  • Data input and output are synchronized with DQS
  • DQS is edge aligned with data for read, center aligned with data for write
  • Differential clock input (CK and CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS
  • Four internal banks for concurrent operating (component)
  • Data mask (DM) for write data
  • Capacity: 2GB DDR2 RAM
  • DDR memory type: DDR2
  • Number of pins: 184
  • Module type: long DIMM
  • Function: non-ECC memory
  • Original chips eg Hynix, Micron, Infineon, Samsung, Elp, Nanya ex
  • Working with all motherboard eg: Intel

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