Liheng Industry (HK) Limited
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Products
Liheng Industry (HK) Limited
Transistors for Amplifier Applications and General Purpose, with Symbol Parameter Value Units
  • Transistors for Amplifier Applications and General Purpose, with Symbol Parameter Value Units
Transistors for Amplifier Applications and General Purpose, with Symbol Parameter Value Units

Transistors for Amplifier Applications and General Purpose, with Symbol Parameter Value Units

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Basic Info
Basic Info
Payment Type: Telegraphic Transfer (TT,T/T)
Product Description
Product Description
  • Features:
    • Low collector -emitter saturation voltage
    • VCE (sat)=1.0V (maximum) at IC=-3A, IB=-0.3A
    • DC current gain
    • hFE =60-200 at IC=0.5A
    • Complementary to NPN 2SD880
    • Maximum ratings (TA = 25C unless otherwise noted)
    • Symbol parameter value units
    • VCBO collector:
      Base voltage: 60V
    • VCEO collector:
      Emitter voltage: 60V
    • VEBO emitter:
      Base voltage: 7V
    • IC collector current:
      Continuous: 3A
    • PC collector power dissipation: 1.5W
    • TJ junction temperature: 150°C
    • Tstg storage temperature: -55 to 150°C
  • Electrical characteristics (Tamb = 25C unless otherwisespecified):
    • Parameter symbol test conditions: minimum type maximumunit
    • Collector-base breakdown voltage: V (BR) CBO IC = -1mA, IE = 0-60V
    • Collector-emitter breakdown voltage: V (BR) CEO IC = -50mA, IB= 0 -60V
    • Emitter-base breakdown voltage: V (BR) EBO IE = -1mA, IC = 0-7V
    • Collector cut-off current: ICBO VCB = -60V, IE=0 -100¼A
    • Emitter cut-off current: IEBO VEB=-7V, IC=0 -100 ¼A
    • hFE (1) x VCE = -5V, IC = -500mA 60 200
    • DC current gain
    • hFE(2) x VCE = -5V, IC = -3A 20
    • Collector-emitter saturation voltage VCE (sat) x IC = -3A, IB =-0.3A -1V
    • Base-emitter voltage VBE x VCE = -5V, IC = -500mA -1 V
    • Transition frequency fT VCE = -5V, IC = -500mA, f = 1,9MHz
    • Turn-on time ton 0.4¼s
    • Storage time tstg 1.7¼s
    • Turn-off time toff
    • VCC = -30V, Ic = -2A,
    • IB = IB2 = -0.2A
    • 0.5¼s
    • Pulse test
    • Classification of hFE(1)
    • Rank: OY
    • Range: 60 to 120, 100 to 200
  • Low collector -emitter saturation voltage
  • VCE (sat)=1.0V (maximum) at IC=-3A, IB=-0.3A
  • DC current gain
  • hFE =60-200 at IC=0.5A
  • Complementary to NPN 2SD880
  • Maximum ratings (TA = 25C unless otherwise noted)
  • Symbol parameter value units
  • VCBO collector:
    Base voltage: 60V
  • VCEO collector:
    Emitter voltage: 60V
  • VEBO emitter:
    Base voltage: 7V
  • IC collector current:
    Continuous: 3A
  • PC collector power dissipation: 1.5W
  • TJ junction temperature: 150°C
  • Tstg storage temperature: -55 to 150°C
  • Parameter symbol test conditions: minimum type maximumunit
  • Collector-base breakdown voltage: V (BR) CBO IC = -1mA, IE = 0-60V
  • Collector-emitter breakdown voltage: V (BR) CEO IC = -50mA, IB= 0 -60V
  • Emitter-base breakdown voltage: V (BR) EBO IE = -1mA, IC = 0-7V
  • Collector cut-off current: ICBO VCB = -60V, IE=0 -100¼A
  • Emitter cut-off current: IEBO VEB=-7V, IC=0 -100 ¼A
  • hFE (1) x VCE = -5V, IC = -500mA 60 200
  • DC current gain
  • hFE(2) x VCE = -5V, IC = -3A 20
  • Collector-emitter saturation voltage VCE (sat) x IC = -3A, IB =-0.3A -1V
  • Base-emitter voltage VBE x VCE = -5V, IC = -500mA -1 V
  • Transition frequency fT VCE = -5V, IC = -500mA, f = 1,9MHz
  • Turn-on time ton 0.4¼s
  • Storage time tstg 1.7¼s
  • Turn-off time toff
  • VCC = -30V, Ic = -2A,
  • IB = IB2 = -0.2A
  • 0.5¼s
  • Pulse test
  • Classification of hFE(1)
  • Rank: OY
  • Range: 60 to 120, 100 to 200

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