Transistors for Aplifier Applications and General Purpose

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Basic Info

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Product Description

Features:

Low collector -emitter saturation voltage

VCE (sat) =1.0v (Max) at IC=-3A, IB=-0.3A

DC current Gain

hFE =60-200@ IC=0.5A

Complementary to NPN 2SD880

MAXIMUM RATINGS (TA=25C unless otherwise noted)

Symbol parameter value units

VCBO collector- base voltage -60 V

VCEO collector-emitter voltage -60 V

VEBO emitter-base voltage -7 V

IC collector current-continuous -3 A

PC collector power dissipation 1.5 W

TJ Junction Temperature 150°C

Tstg Storage Temperature -55-150°C

Parameter symbol test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V (BR) CBO IC=-1mA, IE=0 -60V

Collector-emitter breakdown voltage V (BR) CEO IC =-50mA, IB=0-60 V

Emitter-base breakdown voltage V (BR) EBO IE=-1mA, IC=0 -7V

Collector cut-off current ICBO VCB=-60V, IE=0 -100¼A

Emitter cut-off current IEBO VEB=-7V, IC=0 -100 ¼A

hFE(1) x VCE=-5V, IC=-500mA 60 200

DC current gain

hFE(2) x VCE=-5V,IC=-3A 20

Collector-emitter saturation voltage VCE (sat) x IC=-3A,IB=-0.3A -1 V

Base-emitter voltage VBE x VCE=-5V, IC=-500mA -1 V

Transition frequency fT VCE=-5V, IC=-500mA, f=1MHz 9 MHz

Turn-on Time ton 0.4 ¼s

Storage Time tstg 1.7 ¼s

Turn-off Time toff

VCC=-30V, Ic=-2A,

IB! =IB2=-0.2A

0.5 ¼s

Pulse test

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