Shenzhen Shunyuanda Technology Co. Ltd
Shenzhen Shunyuanda Technology Co. Ltd
DDR2 RAM, 533/667/800Mbps, Double-data Rate Architecture
  • DDR2 RAM, 533/667/800Mbps, Double-data Rate Architecture
DDR2 RAM, 533/667/800Mbps, Double-data Rate Architecture

DDR2 RAM, 533/667/800Mbps, Double-data Rate Architecture

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Telegraphic Transfer in Advance (Advance TT, T/T)
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Basic Info
Basic Info
Payment Type: Telegraphic Transfer in Advance (Advance TT, T/T)
Product Description
Product Description
  • Memory capacity: 512MB to 2GB
  • Types:
    • DDRL 333/400MHz
    • DDR2: 533/667/800MHz
  • 168-/184-/240-pin socket type dual in line memory module(DIMM)
  • Data rate: 533/667/800Mbps (maximum)
  • 2.5V (SSTL-2 compatible) I/O for DDR products and 1.8V powersupply for DDR2 products
  • Chipset organization: 64 x 8, 128 x 4 and 128 x 8
  • Double data-rate architecture and two data transfers/clockcycle
  • Bi-directional, differential data strobe (DQS)transmitted/received with data
  • Used in capturing data at receiver
  • Data inputs and outputs are synchronized with DQS
  • DQS edge aligned with data for read and center for write
  • Various clock inputs (CK and CK)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Chipset brands: ELPIDA, Mosel and NANYA
  • Four internal banks for concurrent operating (component)
  • Posted CAS by programmable additive latency for better commandand data bus efficiency
  • Programmable burst length: 2, 4 and 8mm
  • Programmable/CAS latency: 3
  • Refresh cycles: 8192 refresh cycles/64ms
  • 2-variations of refresh: auto and self
  • 7.8US average periodic refresh interval (maximum)
  • DDRL 333/400MHz
  • DDR2: 533/667/800MHz
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